Project information
Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices
- Project Identification
- GA202/00/0354
- Project Period
- 1/2000 - 1/2002
- Investor / Pogramme / Project type
-
Czech Science Foundation
- Standard Projects
- MU Faculty or unit
- Faculty of Science
The process of self organization during the epitaxial growth of a semiconductor heterostructure is a good candidate for the technology of very small structures (quantum wires and dots) with very interesting applications. In the proposed project the struc ture of self organized interfaces will be studied by x-ray scattering (small angle x-ray scattering, high-angle scattering, grazing-incidence scattering) and by means of atomic-force microscopy. The experimental results will be compared to the theoretica l simulations of epitaxial growth based on the Monte-Carlo simulations of the growth kinetics and on the calculations of the deformation field below the growing surface. Experiments will be performed on SiGe/Si SiC/Ge and PbSe/PbEuTe superlattices grown by molecular beam epitaxy. X-ray measurements will be carried out on laboratory x-ray sources as well as on the ESRF synchrotron in Grenoble. The structural changes of the self organized interfaces at high temperatures will be investigated by x-ray hight
Publications
Total number of publications: 26
2002
-
Processes of self-organization during epitaxial growth of semiconductor superlattices - an x-ray scattering study
From Semiconductors to Proteins: Beyond the Averaged Structure, year: 2002, number of pages: 17 s.
-
Self-organized ordering in self-assembled quantum dot superlattices
Material Sci. and Engn., year: 2002, volume: B88, edition: 10
-
Self-organized semiconductor nanostructures: shape, strain and composition
Materials Science and Engineering, year: 2002, volume: C19, edition: 3
-
Strain in buried self-assembled SiGe wires studied by grazing-incidence x-ray diffraction
Physical Review B, year: 2002, volume: B65, edition: 11
-
Structural investigation of semiconductor nanostructures by x-ray techniques
Nuclear Instruments & Methods in Physics Research A, year: 2002, volume: 200, edition: 1
2001
-
Effect of substrate heating and ion beam polishing on the interface quality in Mo/Si multilayers - X-ray comparative study
Physica B, year: 2001, volume: 305, edition: 1
-
Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires
Phys. Rev. B, year: 2001, volume: 63, edition: 20
-
High-resolution x-ray diffraction from self-organized PbSe/PbEuTe quantum dot superlattices
J. Phys.D.: Appl. Phys., year: 2001, volume: 34, edition: 10A
-
Strain and composition distribution in uncapped SiGe islands from x-ray diffraction
Applied Physics Letters, year: 2001, volume: 79, edition: 10
-
Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering
physica status solidi (b), year: 2001, volume: 224, edition: 1