Project information
Investigation of morphology of semiconductor multilayers using x-ray scattering
- Project Identification
- GP202/05/P286
- Project Period
- 1/2005 - 12/2007
- Investor / Pogramme / Project type
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Czech Science Foundation
- Postdoctoral projects
- MU Faculty or unit
- Faculty of Science
- Keywords
- x-ray scattering, multilayers, SiGe, quantum dots
Heteroepitaxial systems based on semiconductor multilayers are intensively studied due to their extraordinary electrical and optical properties, which depend on the structural quality. In this project, we will investigate morphology of two types ofcompli cated multilayers from materials of type IV and III/V grown by MBE method. Firstly, thick multilayers with large number of non-periodic thin SiGe/Si layers grown in order to design cascade laser structures based on silicon technology. Secondly,multilayer s with self-assembled structures of quantum dots and wires. We will be interested in the morphological properties as a state of individual layers (thickness, refractive index), interfaces (correlation function) and quantum objects (spatialarrangement). I nvestigated samples will be studied by x-ray reflectivity and diffraction methods using laboratory and synchrotron sources. Evaluation of measured data will be based on appropriate growth models.
Publications
Total number of publications: 10
2007
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In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering
Semicond. Sci. Technol., year: 2007, volume: 22, edition: 4
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Interdiffusion in SiGe alloys studied by x-rays
Materials Structure in Chemistry, Biology, Physics and Technology, year: 2007, volume: 14, edition: 2
2006
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In-situ investigations of Si and Ge interdiffusion in Si cascade structures
Synchrotron Radiation in Natural Sciences, year: 2006, volume: 5, edition: 1-2
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IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES
Materials Structure in Chemistry, Biology, Physics and Technology, year: 2006, volume: 13, edition: 3
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IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SIGE MULTILAYERS AND CASCADE STRUCTURES
XTOP 2006 - 8th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, year: 2006
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X-Ray Reflectivity measurements to evaluate thin films and multilayers thickness: preliminary results of the first world Round-Robin Test
XTOP 2006 - 8th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, year: 2006
2005
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High Temperature in-situ Investigation of Si/SiGe Multilayers and Cascade Structures
Materials Structure in Chemistry, Biology, Physics and Technology, year: 2005, volume: 12, edition: 2
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HIGH TEMPERATURE INVESTIGATION OF SiGe/Si-BASED CASCADE EMITTERS IN THE FAR-INFRARED
Year: 2005, type: Conference abstract
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Intersubband absorption of strain compensated, Si1-xGex valenceband quantum wells with 0.7<=x<=0.85
J. Appl. Phys., year: 2005, volume: 98, edition: 4
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Structural studies of strain-symmetrised Si/SiGe structures grown by molecular beam epitaxy
Journal of crystal growth, year: 2005, volume: 278, edition: 1-4