Intersubband absorption of strain compensated, Si1-xGex valenceband quantum wells with 0.7<=x<=0.85

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Authors	FROMHERZ Thomas MEDUŇA Mojmír BAUER Günther BORAK Alex FALUB Claudiu TSUJINO Soichiro SIGG Hans GRÜTZMACHER Detlev
Year of publication	2005
Type	Article in Periodical
Magazine / Source	J. Appl. Phys.
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	X-RAY REFLECTION; CASCADE STRUCTURES; POROUS SILICON; ELECTROLUMINESCENCE; EMITTERS; NARROW
Description	Structural investigations by transmission electron microscopy and high-resolution x-ray reflection and diffraction showed that at a growth temperature around T=300C, samples in excellent compliance with the design parameters. Comparison of polarization-dependent intersubband absorption measurements with simulated intersubband absorption spectra has been done.
Related projects:	Investigation of morphology of semiconductor multilayers using x-ray scattering Physical and chemical properties of advanced materials and structures