Intersubband absorption of strain compensated, Si1-xGex valenceband quantum wells with 0.7<=x<=0.85

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Authors

FROMHERZ Thomas MEDUŇA Mojmír BAUER Günther BORAK Alex FALUB Claudiu TSUJINO Soichiro SIGG Hans GRÜTZMACHER Detlev

Year of publication 2005
Type Article in Periodical
Magazine / Source J. Appl. Phys.
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Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords X-RAY REFLECTION; CASCADE STRUCTURES; POROUS SILICON; ELECTROLUMINESCENCE; EMITTERS; NARROW
Description Structural investigations by transmission electron microscopy and high-resolution x-ray reflection and diffraction showed that at a growth temperature around T=300C, samples in excellent compliance with the design parameters. Comparison of polarization-dependent intersubband absorption measurements with simulated intersubband absorption spectra has been done.
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