Electrical and dielectrical properties of SiOxHyCz thin films prepared by PECVD
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Proceedings |
| Conference | Juniormat 05 |
| MU Faculty or unit | |
| Citation | FRANCLOVÁ, Jana and Vilma BURŠÍKOVÁ. Electrical and dielectrical properties of SiOxHyCz thin films prepared by PECVD. In Juniormat 05. University of Technology, Brno: University of Technology, Brno, 2005, p. 211-214. ISBN 80-214-2984-4. |
| Field | Plasma physics |
| Keywords | Dielectrical properties; Frenkel-Poole conduction |
| Description | SiOxHyCz thin films prepared by PECVD of thickness about 100 - 500 nm were fabricated in the form of sandwich structures using Al electrodes, which show the Frenkel-Poole effect (enhanced conductivity at high electric field due to the lowering of the potential barrier donor-like centres), the value of the Frenkel-Poole field-lowering coefficient increased with the deposition time. |
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