X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Periodical |
| Magazine / Source | J. Phys. D: Appl. Phys. |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | X-ray; diffuse scattering; defects; nitrogen; silicon |
| Description | We have studied nitrogen-doped silicon wafers from origin, middle and end of the ingot, annealed at low and high temperatures, using triple-axis high-resolution X-ray diffraction. The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space maps determines the type of dislocation loops and from cross sections we can obtain the radius and concentration of the loops. These parameters were combined with the results from selective etching and infrared absorption spectroscopy method. |
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