MODIFICATIONS OF THE OPTICAL PARAMETERS  OF THE SILICON THIN FILMS DUE TO THE LIGHT SCATTERING

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Authors	SLÁDEK Petr SŤAHEL Pavel ŠŤASTNÝ Jiří PŘIKRYL Radek
Year of publication	2000
Type	Article in Proceedings
Conference	Electronic Devices and Systems Y2K
MU Faculty or unit	Faculty of Education
Citation
Field	Solid matter physics and magnetism
Keywords	Light scattering; Si thin film ; Photocurrent
Description	We use photocurrent and photothermal deflection spectroscopies to study defects in amorphous, polymorphous and microcrystalline Si thin films. Enhanced light absorption in mc-Si, nc-Si and pm-Si films is due to the several contributions, one of which is the light scattering. For the estimation of the influence of the light scattering on the standard CPM measurements we use the innovation method of the "outside" induced excess current, when the probing beam is impinging outside the region with the electric field (between electrodes).
Related projects:	Study of plasmachemical reactions in non-isothermic low pressure plasma and its interaction with the surface of solid substrates