Interdiffusion in amorphous Nb/Si multilayers

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Authors

BOCHNÍČEK Zdeněk VÁVRA Ivo

Year of publication 2000
Type Article in Periodical
Magazine / Source Materials Letters
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords Nb/Si multilayer; Interdiffusion; Thermal stability
Description The interdiffusion in amorphous Nb/Si multilayers has been studied using x-ray optical reflection and TEM in temperature range from 150degC up to 350degC. In the whole temperature scale the experimental data show that annealing causes interface shift without any other detectable change of multilayer parameters, namely period and interface roughness. The model based on diffusion of Si into Nb has been proposed which fits very well Arrhenius relation for diffusion coefficient and provides values comparable with previously published ones.
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