Interdiffusion in amorphous Nb/Si multilayers

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Authors	BOCHNÍČEK Zdeněk VÁVRA Ivo
Year of publication	2000
Type	Article in Periodical
Magazine / Source	Materials Letters
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	Nb/Si multilayer; Interdiffusion; Thermal stability
Description	The interdiffusion in amorphous Nb/Si multilayers has been studied using x-ray optical reflection and TEM in temperature range from 150degC up to 350degC. In the whole temperature scale the experimental data show that annealing causes interface shift without any other detectable change of multilayer parameters, namely period and interface roughness. The model based on diffusion of Si into Nb has been proposed which fits very well Arrhenius relation for diffusion coefficient and provides values comparable with previously published ones.
Related projects:	Laboratory of thin films and nanostructures Thermal stability of layered systems studied by high resolution x-ray diffraction and optical reflection of x-rays in situ during annealing