GaAs quantum dots under quasiuniaxial stress: Experiment and theory

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Authors

YUAN Xueyong SILVA Saimon F. Covre da CSONTOSOVÁ Diana HUANG Huiying SCHIMPF Christian REINDL Marcus LU Junpeng NI Zhenhua RASTELLI Armando KLENOVSKÝ Petr

Year of publication 2023
Type Article in Periodical
Magazine / Source Physical Review B
MU Faculty or unit

Faculty of Science

Citation
Web https://doi.org/10.1103/PhysRevB.107.235412
Doi http://dx.doi.org/10.1103/PhysRevB.107.235412
Keywords Elasticity; Electronic structure; Excitons; Fermions; Lifetimes and widths; Luminescence; Nonlocality; Quantum cryptography; Stress
Description The optical properties of excitons confined in initially unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasiuniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimental parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band k·p formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.
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