Strain relaxation and misfit dislocations in compositionally graded Si 1-x Ge x layers on Si (001)

Warning

This publication doesn't include Faculty of Sports Studies. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	LI J.H. HOLÝ Václav
Year of publication	1995
Type	Article in Periodical
Magazine / Source	Journal of Crystal Growth
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Related projects:	Physical properties of new materials and layered structures