Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

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Authors

MEDUŇA Mojmír KREILIGER Thomas PRIETO Ivan MAUCERI Marco PUGLISI Marco MANCARELLA Fulvio LA VIA Francesco CRIPPA Danilo MIGLIO Leo VON KÄNEL Hans

Year of publication 2016
Type Article in Periodical
Magazine / Source Materials Science Forum
MU Faculty or unit

Central European Institute of Technology

Citation
Doi http://dx.doi.org/10.4028/www.scientific.net/MSF.858.147
Field Solid matter physics and magnetism
Keywords High-resolution X-ray diffraction; high-resolution scanning electron microscopy; electron backscatter diffraction; stacking faults; patterned Si substrates; heteroepitaxy; 3C-SiC
Description The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si(001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction.
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