Infrared Absorption Spectroscopy of Defects in Floating Zone Silicon
| Autoři | |
|---|---|
| Rok publikování | 2010 |
| Druh | Článek ve sborníku |
| Konference | 8th Interantional Conference NDT 2010 - Non-Destructive Testing in Engineering Practice (id 18982) |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | Infrared spectroscopy; silicon; interstitial oxygen; substitutional carbon. |
| Popis | The infrared absorption method was used to study interstitial oxygen and substitutional carbon in floating zone silicon samples. Transmittance spectra have been measured in the temperature range from 10 to 300 K. This allowed us to determine low concentrations of interstitial oxygen and substitutional carbon in these samples. In the data analysis, we focused on isotopic splitting of the interstitial oxygen absorption band. The low temperature absorption spectra have been analysed using Lorentz oscillators and thus we were able to determine the abundances of the silicon isotopes in our samples. |
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