GID study of strains in Si due to patterned SiO2

• Autoři: DANIEL A.;; HOLÝ Václav; ZHUANG Y.; ROCH T.; GRENZER J.; BOCHNÍČEK Zdeněk; BAUER G.
• Rok publikování: 2001
• Druh: Článek v odborném periodiku
• Časopis / Zdroj: J. Phys. D: Appl. Phys.
• Fakulta / Pracoviště MU: Přírodovědecká fakulta
• Obor: Fyzika pevných látek a magnetismus
• Klíčová slova: GID; stress;SiO2
• Popis: Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved.

Související projekty

• Laboratoř tenkých vrstev a nanostruktur