Oxidation of Silicon Surface by DCSBD
| Autoři | |
|---|---|
| Rok publikování | 2012 |
| Druh | Článek ve sborníku |
| Konference | NANOCON 2012, 4th INTERNATIONAL CONFERENCE |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://www.nanocon.eu/files/proceedings/04/reports/772.pdf |
| Obor | Fyzika plazmatu a výboje v plynech |
| Klíčová slova | Coplanar DBD; silicon dioxide; oxidation; atmospheric pressure plasma |
| Popis | In the present work plasma oxidation of crystalline silicon (c-Si) surface in diffuse coplanar surface barrier discharge (DCSBD) generated at atmospheric pressure has been studied. Silicon surface has been oxidized in oxygen and argon plasma. The surface properties have been studied by means scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses. It was found that thin layer of amorphous silicon dioxide during the short treatment time was formed. Oxidation by DCSBD could represent new alternative of a low cost and fast oxidation process. |
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