Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation

Warning

This publication doesn't include Faculty of Sports Studies. It includes Faculty of Science. Official publication website can be found on muni.cz.
Authors

KOMARNITSKYY Volodymyr HAZDRA Pavel BURŠÍKOVÁ Vilma

Year of publication 2011
Type Article in Periodical
Magazine / Source physica status solidi (c)
MU Faculty or unit

Faculty of Science

Citation
Doi http://dx.doi.org/10.1002/pssc.201000301
Field Plasma physics
Keywords Deuterium; Hydrogen; Radiation defects; Silicon
Description Interaction of hydrogen and deuterium with radiation defects introduced by irradiation with high-energy alphas was investigated in the low-doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodes were first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm-2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 C and diodes were isochronally annealed at temperatures ranging from 100 to 400 C. Reactions of hydrogen and deuterium with radiation defects were monitored by deep-level transient spectroscopy. Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha-particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy-related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC-0.309 eV and EC-0.365 eV. While hydrogenation significantly accelerates annealing of radiation defects, deuteration has weaker effect and gives rise to new defect levels during annealing.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.

More info