Mechanical Properties of Ultrananocrystalline Thin Films Deposited Using Dual Frequency Discharges
Authors | |
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Year of publication | 2011 |
Type | Article in Periodical |
Magazine / Source | CHEMICKÉ LISTY |
MU Faculty or unit | |
Citation | |
Web | http://www.chemicke-listy.cz/docs/full/2011_14_s98-s101.pdf |
Field | Plasma physics |
Keywords | ultrananocrystalline diamond; plasma enhanced chemical vapor deposition; dual frequency discharge; local mechanical properties |
Description | The present paper describes the deposition of nanostruc- tured diamond films with low surface roughness, high hard- ness and fracture toughness by microwave PECVD in the ASTeX type reactor from mixture of methane and hydrogen. Films were deposited on a mirror polished (111) oriented n- doped silicon substrate. The film exhibited relatively low roughness, the root mean square (RMS) of heights ranged from 20 to 9.1 nm, depending on the deposition conditions. The hardness was found to be in the range from 22 to 65 GPa and the elastic modulus ranged from 220 to 375 GPa, depend- ing on the film structure |
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