Oxygen precipitation studied by x-ray diffraction techniques

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Authors	MEDUŇA Mojmír CAHA Ondřej RŮŽIČKA Jiří BERNATOVÁ Silvie SVOBODA Milan BURŠÍK Jiří
Year of publication	2011
Type	Article in Periodical
Magazine / Source	Solid State Phenomena
MU Faculty or unit	Central European Institute of Technology
Citation
Field	Solid matter physics and magnetism
Keywords	Czochralski silicon; oxygen precipitates; x-ray Laue diffraction
Description	We report on study of oxygen precipitates grown in Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon Strain engineering in diluted magnetic semiconductors Struktura, elektronová struktura a optická odezva pokročilých materiálů CEITEC - Central European Institute of Technology