Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots

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Authors	PLUMHOF Johannes David KŘÁPEK Vlastimil DING Fei JOENS K. D. HAFENBRAK R. KLENOVSKÝ Petr HERKLOTZ A. DORR K. MICHLER P. RASTELLI Armando SCHMIDT Oliver G.
Year of publication	2011
Type	Article in Periodical
Magazine / Source	Physical Review B
MU Faculty or unit	Faculty of Science
Citation
Web	http://prb.aps.org/abstract/PRB/v83/i12/e121302
Doi	http://dx.doi.org/10.1103/PhysRevB.83.121302
Field	Solid matter physics and magnetism
Keywords	ENTANGLED PHOTON PAIRS; SEMICONDUCTOR; SPIN
Description	We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. We find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (FSS) varies nonmonotonically by several tens of mu eV as the strain is varied. These findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. Calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable FSS critically depends on the orientation of the strain axis relative to the dot elongation.
Related projects:	Physical and chemical properties of advanced materials and structures Vliv krycích vrstev na elektronové stavy v kvantových tečkách Struktura, elektronová struktura a optická odezva pokročilých materiálů