X-ray scattering study of oxide precipitates in Cz-Si

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Authors	CAHA Ondřej MEDUŇA Mojmír BERNATOVÁ Silvie RŮŽIČKA Jiří MIKULÍK Petr BURŠÍK Jiří SVOBODA Milan BERNSTORFF S.
Year of publication	2010
Type	Conference abstract
MU Faculty or unit	Faculty of Science
Citation
Description	Two x-ray diffraction methods were used for characterization of the oxide precipitates in Czochralski silicon series of samples. The maping of the diffuse scattering around reciprocal lattice point in Bragg geometry and the simultaneous measurement of the diffracted and transmitted beam intensity in the Laue diffraction geometry.
Related projects:	Physical and chemical properties of advanced materials and structures Nucleation and growth of oxygen precipitates in silicon Strain engineering in diluted magnetic semiconductors