Improved low-k dielectric properties using He/H2 plasma for resist removal

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Authors	URBANOWICZ Adam SHAMIRYAN Denis MARŠÍK Přemysl TRAVALY Youssef VERDONCK Patrick VANSTREELS Kris FERCHICHI Abdelkarim DE ROEST David SPREY Hessel MATSUSHITA Kiyohiro KANEKO Shinya TSUI N. LUO Shijian ESCORCIA Orlando BERRY Ivan WALDFRIED Carlo DE GENDT Stefan BAKLANOV Mikhail
Year of publication	2008
Type	Appeared in Conference without Proceedings
MU Faculty or unit	Faculty of Science
Citation
Description	Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material.
Related projects:	Physical and chemical properties of advanced materials and structures