STACKING FAULTS AND DISLOCATION DISSOCIATION IN MoSi2

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Authors

ČÁK Miroslav ŠOB Mojmír PAIDAR Václav VÍTEK Václav

Year of publication 2009
Type Article in Proceedings
Conference Advanced Intermetallic-Based Alloys for Extreme Environment and Energy Applications
MU Faculty or unit

Faculty of Science

Citation
Web http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=16789&DID=217001
Field Solid matter physics and magnetism
Keywords stacking faults; dislocation dissociation; molybdenum disilicide
Description We present the g-surfaces for the (013) and (110) planes calculated by employing the density functional based method as implemented in the VASP code. While there is only one minimum on the (110) g-surface, three distinct minima have been found on the (013) g-surface. These minima, which determine three types of possible stacking faults on the (013) plane, are not symmetry dictated and thus the fault vectors are to a great extent controlled by the details of the interatomic bonding in MoSi2
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