STACKING FAULTS AND DISLOCATION DISSOCIATION IN MoSi2
| Authors | |
|---|---|
| Year of publication | 2009 |
| Type | Article in Proceedings |
| Conference | Advanced Intermetallic-Based Alloys for Extreme Environment and Energy Applications |
| MU Faculty or unit | |
| Citation | |
| Web | http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=16789&DID=217001 |
| Field | Solid matter physics and magnetism |
| Keywords | stacking faults; dislocation dissociation; molybdenum disilicide |
| Description | We present the g-surfaces for the (013) and (110) planes calculated by employing the density functional based method as implemented in the VASP code. While there is only one minimum on the (110) g-surface, three distinct minima have been found on the (013) g-surface. These minima, which determine three types of possible stacking faults on the (013) plane, are not symmetry dictated and thus the fault vectors are to a great extent controlled by the details of the interatomic bonding in MoSi2 |
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