Electronic structure of indium-tin alloys
| Authors | |
|---|---|
| Year of publication | 2007 |
| Type | Article in Proceedings |
| Conference | Sborník příspěvků VII. Pracovního setkání fyzikálních chemiků a elektrochemiků |
| MU Faculty or unit | |
| Citation | |
| Field | Physical chemistry and theoretical chemistry |
| Keywords | Electronic structure; tin; indium; gamma-tin; virtual crystal approximation |
| Description | The In-Sn system is interesting due to the existence of the simple hexagonal (sh) structure for compositions from 75 to 87 at% Sn at 25 st.C and from 73 to 85 at% Sn at -150 st.C. These alloys are usually referred to as gamma-Sn. The In-Sn alloys are disordered in the whole concentration interval. To describe disorder it is not quite easy. One of the possibilities how to study disordered alloys is the virtual crystal approximation (VCA). VCA investigates a solid as composed of "virtual" atoms which interpolate the behavior of the real atoms from the parent compounds. |
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