Development of oxide precipitates in silicon: calculation of the distribution function of the classical theory of nucleation by a nodal-points approximation
Authors | |
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Year of publication | 2007 |
Type | Article in Periodical |
Magazine / Source | J. Phys. Condens. Matter |
MU Faculty or unit | |
Citation | |
Web | http://www.iop.org/EJ/abstract/0953-8984/19/49/496202/ |
Field | Solid matter physics and magnetism |
Keywords | silicon; theory of nucleation; cluster distribution; oxygen precipitation; annealing |
Description | The classical theory of nucleation in solids is mathematically expressed by a system of differential equations for temporal development of cluster distribution (sizes and their concentration). The full numerical simulation grows linearly with the number of equations, making the numerical solution extremely time-consuming. In this paper we develop a nodal-points approximation method with a logarithmic efficiency, which allows us to calculate the cluster distribution very quickly. |
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