1.3 mum emission from InAs/GaAs quantum dots

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Authors

KULDOVÁ Karla KŘÁPEK Vlastimil HOSPODKOVÁ Alice OSWALD Jiří PANGRÁC Jiří MELICHAR Karel HULICIUS Eduard POTEMSKI Marek HUMLÍČEK Josef

Year of publication 2006
Type Article in Periodical
Magazine / Source physica status solidi (c)
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords quantum dots; InAs/GaAs; magnetophotoluminescence
Description We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1–xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.
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