Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Applied Physics |
| MU Faculty or unit | |
| Citation | |
| Web | http://link.aip.org/link/?JAP/98/073517/1 |
| Field | Solid matter physics and magnetism |
| Keywords | ASSEMBLED GE ISLANDS; QUANTUM DOTS; STRAIN; NANOSTRUCTURES; STACKING; X-RAY DIFFRACTION |
| Description | An analysis of coplanar high-angle x-ray-diffraction data was performed and structural information on buried Ge islands forming a 3D island crystal was obtained. We have demonstrated that the combination of an analytical solution of the equilibrium equations of linear elasticity with kinematical scattering theory can be used to simulate the experimental x-ray-diffraction data. The strain state in the buried islands and their surrounding Si matrix was determined. The Ge content in the islands is found to be on the average 40%, and the island shape does not change dramatically during capping. |
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