Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction

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Authors

NOVÁK Jiří HOLÝ Václav STANGL Julian FROMHERZ Thomas ZHENYANG Zhong GANG Chen BAUER Günther STRUTH Bernd

Year of publication 2005
Type Article in Periodical
Magazine / Source Journal of Applied Physics
MU Faculty or unit

Faculty of Science

Citation
Web http://link.aip.org/link/?JAP/98/073517/1
Field Solid matter physics and magnetism
Keywords ASSEMBLED GE ISLANDS; QUANTUM DOTS; STRAIN; NANOSTRUCTURES; STACKING; X-RAY DIFFRACTION
Description An analysis of coplanar high-angle x-ray-diffraction data was performed and structural information on buried Ge islands forming a 3D island crystal was obtained. We have demonstrated that the combination of an analytical solution of the equilibrium equations of linear elasticity with kinematical scattering theory can be used to simulate the experimental x-ray-diffraction data. The strain state in the buried islands and their surrounding Si matrix was determined. The Ge content in the islands is found to be on the average 40%, and the island shape does not change dramatically during capping.
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