Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots
| Authors | |
|---|---|
| Year of publication | 2005 |
| Type | Article in Proceedings |
| Conference | CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | quantum dots; photoluminescence |
| Description | We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response. |
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