Morphological instability in InAs/GaSb superlattices due to interfacial bonds

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Authors

LI J H STOKES D W CAHA Ondřej AMMU S L BAI J. BASSLER K E MOSS S C

Year of publication 2005
Type Article in Periodical
Magazine / Source Physical Review Letters
MU Faculty or unit

Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords STRAINED-LAYER SUPERLATTICES; MOLECULAR-BEAM EPITAXY; SURFACE-DIFFUSION; MU-M; GROWTH; LATTICE
Description Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds.
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