X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

Warning

This publication doesn't include Faculty of Sports Studies. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	MEDUŇA Mojmír HOLÝ Václav ROCH T.
Year of publication	2001
Type	Article in Periodical
Magazine / Source	Journal of Applied Physics
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES
Description	We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.
Related projects:	Laboratory of thin films and nanostructures Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices