Origin of the metastability of phosphorus or boron doped a-Si:H films

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Authors

SŤAHEL Pavel SLÁDEK Petr ROCA I CABARROCAS Pere ŠŤASTNÝ Jiří

Year of publication 2000
Type Article in Proceedings
Conference Electronic Devices and Systems Y2K - Proceedings
MU Faculty or unit

Faculty of Education

Citation
Field Solid matter physics and magnetism
Keywords amorphous silicon; doping; metastability
Description The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role.
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