Thermal stability of amorphous Nb/Si multilayers studied by x-ray reflection

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Authors	BOCHNÍČEK Zdeněk VÁVRA Ivo HOLÝ Václav
Year of publication	1999
Type	Article in Periodical
Magazine / Source	Bulletin Krystalografické společnosti Materials Structure
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Keywords	thermal stability; mutlilayers; x-ray reflection
Description	The thermal stability was studied in temperature range from 150C up to 350C. It has been found, that interdifusion causes the interface shift without lost of interface sharpness. The diffusion model has been suggested that is based on enhanced diffusion of Si into Nb component of the multilayer.
Related projects:	Thermal stability of layered systems studied by high resolution x-ray diffraction and optical reflection of x-rays in situ during annealing