Thermal stability of amorphous Nb/Si multilayers studied by x-ray reflection

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Authors

BOCHNÍČEK Zdeněk VÁVRA Ivo HOLÝ Václav

Year of publication 1999
Type Article in Periodical
Magazine / Source Bulletin Krystalografické společnosti Materials Structure
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Faculty of Science

Citation
Field Solid matter physics and magnetism
Keywords thermal stability; mutlilayers; x-ray reflection
Description The thermal stability was studied in temperature range from 150C up to 350C. It has been found, that interdifusion causes the interface shift without lost of interface sharpness. The diffusion model has been suggested that is based on enhanced diffusion of Si into Nb component of the multilayer.
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