Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots

Investor logo
Investor logo

Warning

This publication doesn't include Faculty of Sports Studies. It includes Faculty of Science. Official publication website can be found on muni.cz.
Authors

HACKL Florian GRYDLIK Martyna KLENOVSKÝ Petr SCHAEFFLER Friedrich FROMHERZ Thomas BREHM Moritz

Year of publication 2019
Type Article in Periodical
Magazine / Source Annalen der Physik (Berlin)
MU Faculty or unit

Faculty of Science

Citation
Web https://onlinelibrary.wiley.com/doi/epdf/10.1002/andp.201800259
Doi http://dx.doi.org/10.1002/andp.201800259
Keywords SiGe/Si;kvantove tecky;rekombinacni procesy;kp teorie
Description In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type-II self-assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion-shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier-recombination paths. By using high-energy photons for PL excitation, electron-hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture-, loss- and recombination-dynamics to PL time-decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture-, excitonic-emission-, and Auger-recombination rates in this type-II nano-system.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.

More info