X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers

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Authors

MEDUŇA Mojmír KREILIGER Thomas MAUCERI Marco PUGLISI Marco MANCARELLA Fulvio LA VIA Francesco CRIPPA Danilo MIGLIO Leo VON KÄNEL Hans

Year of publication 2019
Type Article in Periodical
Magazine / Source Journal of Crystal Growth
MU Faculty or unit

Faculty of Science

Citation
Web Full Text
Doi http://dx.doi.org/10.1016/j.jcrysgro.2018.10.046
Keywords Semiconducting silicon compounds; Carbides; High resolution X-ray diffraction; Planar defects; Low dimensional structures
Description We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0].
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