Amorphous gallium oxide grown by low-temperature PECVD
| Authors | |
|---|---|
| Year of publication | 2018 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Vacuum Science and Technology A |
| MU Faculty or unit | |
| Citation | |
| Web | http://dx.doi.org/10.1116/1.5018800 |
| Doi | http://dx.doi.org/10.1116/1.5018800 |
| Keywords | Chemical compounds; Optical properties; Thin films; Electron energy loss spectroscopy; Physics of gases |
| Description | Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, theauthors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200°C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes. |
| Related projects: |