SiO2/Si etching in atmospheric pressure hydrogen DBD plasma

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Authors

KRUMPOLEC Richard ČECH Jan ČERNÁK Mirko

Year of publication 2015
Type Conference abstract
MU Faculty or unit

Faculty of Science

Citation
Description The SiO2/Si etching was studied in DCSBD discharge generated in pure hydrogen at atmospheric pressure and room temeperature conditions. The estimated etching rate of SiO2 was approx. 1 nm/min.
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