GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
| Authors | |
|---|---|
| Year of publication | 2016 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Applied Physics |
| MU Faculty or unit | |
| Citation | |
| Web | http://aip.scitation.org/doi/10.1063/1.4940379 |
| Doi | http://dx.doi.org/10.1063/1.4940379 |
| Field | Solid matter physics and magnetism |
| Keywords | molecular-beam epitaxy; x-ray-diffraction; migration-enhanced epitaxy; short-period superlattices; graded buffer layers; low-temperature; dislocation generation; heteroepitaxial films; thermal-expansion; on-si |
| Description | Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-mu m-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images. (C) 2016 AIP Publishing LLC. |
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