Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure

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Authors

SCHÄFER Jan HNILICA Jaroslav ŠPERKA Jiří QUADE Antje KUDRLE Vít FOEST Rüdiger VODÁK Jiří ZAJÍČKOVÁ Lenka

Year of publication 2016
Type Article in Periodical
Magazine / Source Surface and Coatings Technology
MU Faculty or unit

Faculty of Science

Citation
Doi http://dx.doi.org/10.1016/j.surfcoat.2015.09.047
Field Plasma physics
Keywords Tetrakis(trimethylsilyloxy)silane; Tetrakis(trimethylsiloxy)silane; Plasma jet; Silicon dioxide
Attached files
Description We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a radiofrequency and a microwave plasma jets operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
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