Measurement of thickness distribution, optical constants, and roughness parameters of rough nonuniform ZnSe thin films

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Authors

NEČAS David OHLÍDAL Ivan FRANTA Daniel OHLÍDAL Miloslav ČUDEK Vladimír VODÁK Jiří

Year of publication 2014
Type Article in Periodical
Magazine / Source Applied Optics
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://www.opticsinfobase.org/ao/abstract.cfm?uri=ao-53-25-5606
Doi http://dx.doi.org/10.1364/AO.53.005606
Field Optics, masers and lasers
Keywords CHEMICAL-VAPOR-DEPOSITION; II-VI COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; LARGE-AREA; SURFACE-ROUGHNESS; LIGHT-SCATTERING; DOUBLE-LAYERS; SUM-RULE; BOUNDARIES; DEPOLARIZATION
Attached files
Description Epitaxial ZnSe thin films exhibiting two important defects, i.e., boundary roughness and thickness nonuniformity, prepared on GaAs substrates, are optically characterized using a combination of variable-angle spectroscopic ellipsometry, spectroscopic near-normal reflectometry, and imaging spectroscopic reflectometry (ISR). The influence of boundary roughness is incorporated into optical quantity formulas by the Rayleigh-Rice theory. Thickness nonuniformity is included using averaging of the unnormalized Mueller matrices. The dispersion model of the optical constants of the ZnSe films is based on parametrization of the joint density of electronic states. Very thin overlayers represented by thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe films. Standard optical techniques are used to determine the spectral dependencies of the optical constants of the ZnSe films, together with the parameters of roughness and thickness nonuniformity. ISR is then used to find the maps of the local thickness and local rms value of height irregularities. The values of roughness parameters, determined using the standard techniques and ISR, are verified by a comparison with results obtained by atomic force microscopy. (C) 2014 Optical Society of America
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