Zařízení pro měření rekombinačních procesů v epitaxních vrstvách křemíku
| Title in English | Apparatus for measuring recombinant processes in silicon epitaxial layers |
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| Authors | |
| Year of publication | 2014 |
| MU Faculty or unit | |
| Description | Equipment for monitoring recombination processes in the epitaxial silicon layers is designed to measure electrical currents across the structure. The contact of epitaxial layer with a semitransparent metal electrode is used to measure the current of carriers excited by light pulses from an optical fiber. |
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