Zařízení pro měření rekombinačních procesů v epitaxních vrstvách křemíku

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Title in English Apparatus for measuring recombinant processes in silicon epitaxial layers
Authors

BOČÁNEK Luděk HUMLÍČEK Josef

Year of publication 2014
MU Faculty or unit

Faculty of Science

Description Equipment for monitoring recombination processes in the epitaxial silicon layers is designed to measure electrical currents across the structure. The contact of epitaxial layer with a semitransparent metal electrode is used to measure the current of carriers excited by light pulses from an optical fiber.
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