THE EFFECT OF SURFACE CLEANING AND REMOVING OF ORGANIC CONTAMINANTS FROM SILICON SUBSTRATES AND ITO GLASS BY ATMOSPHERIC PRESSURE NON-THERMAL PLASMA
| Authors | |
|---|---|
| Year of publication | 2012 |
| Type | Article in Periodical |
| Magazine / Source | CHEMICKÉ LISTY |
| MU Faculty or unit | |
| Citation | |
| Field | Plasma physics |
| Keywords | DCSBD; silicon substrates; ITO glass;cleaning; organic contaminants |
| Description | Plasma generated by DCSBD was investigated for cleaning and removing of organic contaminants from semiconductor materials. ITO glass used in photovoltaics and three types of most often used silicon surfaces in semiconductor industry – precleaned silicon, thermally oxidized silicon and H-terminated silicon was studied. The changes in chemical bonds on silicon surfaces were investigated by FTIR. Removing of IPA from silicon substrates was observed by XPS measurements. Effectivity of DCSBD as cleaning agent in comparison with isopropylacohol was investigated on ITO glass samples by XPS measurement. |
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